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Correlation between the lattice parameter and the dielectric tunability in nonepitaxial Ba0.5Sr0.5TiO3 thin films

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5 Author(s)
Delprat, Sebastien Luc ; INRS Énergie, Matériaux et Télécommunications, Université du Québec, 1650 Boulevard Lionel-Boulet, Varennes, J3X 1S2 Québec, Canada ; Durand, Christophe ; Oh, JaeHo ; Chaker, Mohamed
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Nonepitaxial Ba0.5Sr0.5TiO3 (BST) films intended for tunable-microwave applications are deposited on alumina substrate by reactive pulsed laser deposition. A direct correlation is established between the lattice parameter and the dielectric tunability (measured at 3 GHz and 3 V μm-1) independently of the parameters used to synthesize the films (oxygen deposition pressure, deposition/crystallization temperature, and W–Al doping level). This correlation is explained in terms of elastic strain effects inside the Ba0.5Sr0.5TiO3 grains. According to this study, a broad tunability can be achieved on low-cost microwave devices based on nonepitaxial BST films provided the internal elastic stress of the film is minimal.

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Applied Physics Letters  (Volume:91 ,  Issue: 6 )