By Topic

Correlation between the lattice parameter and the dielectric tunability in nonepitaxial Ba0.5Sr0.5TiO3 thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Delprat, Sebastien Luc ; INRS Énergie, Matériaux et Télécommunications, Université du Québec, 1650 Boulevard Lionel-Boulet, Varennes, J3X 1S2 Québec, Canada ; Durand, Christophe ; Oh, JaeHo ; Chaker, Mohamed
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2768898 

Nonepitaxial Ba0.5Sr0.5TiO3 (BST) films intended for tunable-microwave applications are deposited on alumina substrate by reactive pulsed laser deposition. A direct correlation is established between the lattice parameter and the dielectric tunability (measured at 3 GHz and 3 V μm-1) independently of the parameters used to synthesize the films (oxygen deposition pressure, deposition/crystallization temperature, and W–Al doping level). This correlation is explained in terms of elastic strain effects inside the Ba0.5Sr0.5TiO3 grains. According to this study, a broad tunability can be achieved on low-cost microwave devices based on nonepitaxial BST films provided the internal elastic stress of the film is minimal.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 6 )