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Low temperature a-Si:H photodiodes and flexible image sensor arrays patterned by digital lithography

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6 Author(s)
Nga Ng, Tse ; Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, California 94304 ; Lujan, Rene A. ; Sambandan, S. ; Street, R.A.
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Hydrogenated amorphous silicon-based image sensor arrays were fabricated on polyethylene naphthalate substrates, with photodiodes optimized for process temperatures of 150 °C. An optimal i-layer thickness was determined to minimize carrier recombination and to maintain sufficient light absorption and acceptable leakage current. Patterning of the thin-film transistor backplane was accomplished using ink-jet printed etch masks. A flexible image sensor is demonstrated with 75 dots/in. resolution over 180×180 pixels and with sensitivity of 1.2 pW/cm2.

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Applied Physics Letters  (Volume:91 ,  Issue: 6 )