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Gain degradation mechanisms in wafer fused AlGaAs/GaAs/GaN heterojunction bipolar transistors

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5 Author(s)
Chuanxin Lian ; Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 ; Grace Xing, Huili ; Wang, Chad S. ; Brown, D.
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The authors have compared AlGaAs/GaAs/GaN heterojunction bipolar transistors (HBTs) formed by wafer fusion with AlGaAs/GaAs/GaAs as-grown HBTs subject to high temperature annealing conditions similar to those used in the wafer fusion process. The high temperature annealing alone is found to cause gain degradation by a factor of 2–6, a result of reduction in minority carrier lifetime in the base. Detailed analysis indicates that the fused HBTs also suffer from higher recombination in the emitter-base junction, exacerbated base degradation as well as effective potential barriers formed at the GaAs base/GaN collector junction.

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Applied Physics Letters  (Volume:91 ,  Issue: 6 )