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Transconductance enhancement of nanowire field-effect transistors by built-up stress induced during thermal oxidation

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7 Author(s)
Seike, A. ; Faculty of Science and Engineering, Waseda University, Ohkubo 3-4-1, Shinjyuku, Tokyo 169-8555, Japan ; Tange, T. ; Sano, I. ; Sugiura, Y.
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The authors report the enhancement of transconductance in nanowire field effect transistors due to build-up tensile stress during thermal oxidation. To evaluate the effect of stress, nanowires were thermally oxidized at (A) 900 °C/15 min, (B) 850 °C/1 h, and (C) 850 °C/1 h with a subsequent 1000 °C annealing. The transconductance of sample B is enhanced 2.6 times compared to sample A. No enhancement of transconductance is observed in sample C. The Raman spectra indicate tensile stress in sample B and compressive stress in sample C. This establishes that gm enhancement is due to the build-up tensile stress in nanowires, but is diminished by viscoelastic relaxation.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 6 )

Date of Publication:

Aug 2007

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