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Suppression of secondary phase formation in Fe implanted ZnO single crystals

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8 Author(s)
Potzger, K. ; Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany ; Zhou, Shengqiang ; Reuther, H. ; Kuepper, K.
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Unwanted secondary phases are one of the major problems in diluted magnetic semiconductor creation. Here, the authors show possibilities to avoid such phases in Fe implanted and postannealed ZnO(0001) single crystals. While α-Fe nanoparticles are formed after such doping in as-polished crystals, high temperature (1273 K) annealing in O2 or high vacuum before implantation suppresses these phases. Thus, the residual saturation magnetization in the preannealed ZnO single crystals is about 20 times lower than for the as-polished ones and assigned to indirect coupling between isolated Fe ions rather than to clusters.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 6 )