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Temperature-dependent photoresponsivity and high-temperature (190 K) operation of a quantum dot infrared photodetector

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3 Author(s)
Lu, X. ; Department of Electrical and Computer Engineering, University of Massachusetts Lowell, One University Avenue, Lowell, Massachusetts 01854 ; Vaillancourt, Jarrod ; Meisner, Mark J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2766655 

In this letter, a longwave infrared (LWIR) InAs–InGaAs quantum dot infrared photodetector with a peak detection wavelength of 9.9 μm is reported. A large photoresponsivity of 2.5 A/W and a high peak specific photodetectivity D* of 1.1×108 cm Hz1/2/W were obtained at the operating temperature of 190 K. The QDIP showed a strong temperature-dependent photoresponsivity over the temperature range from 78 to 190 K. This effect is shown to be attributable to temperature-dependent electron capture probability.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 5 )

Date of Publication:

Jul 2007

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