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Shape transformation during overgrowth of InGaAs/GaAs(001) quantum rings

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7 Author(s)
Hanke, M. ; Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Hoher Weg 8, D-06120 Halle/Saale, Germany ; Mazur, Yu.I. ; Marega, E. ; AbuWaar, Z.Y.
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The authors have investigated a shape transformation during the vertical stacking of InGaAs quantum rings (QRs) on GaAs(001). Samples have been grown by means of molecular beam epitaxy. The initial QR layer exhibits nearly round-shaped, flat disks. Especially for a very thin spacer layer of 2 nm, the topmost QRs in a twofold stack tend to be of ellipsoidal shape with preferential elongation along the [110] direction. Grazing incidence diffraction and corresponding x-ray scattering simulations prove an asymmetry in the shape of the buried QRs with respect to different <110> directions. This clearly indicates a significant shape transformation during the overgrowth process from circular toward ellipsoidal QRs.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 4 )

Date of Publication: Jul 2007

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