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Gate oxide scaling down in HfO2GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

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8 Author(s)
Kim, Hyoung-Sub ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758 ; Ok, Injo ; Zhang, Manhong ; Zhu, F.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2762291 

The primary goal of this work is to investigate the capability of gate oxide scaling down in HfO2-based GaAs metal-oxide-semiconductor capacitor (MOSCAP) using a thin germanium (Ge) interfacial passivation layer (IPL). With HfO2 of 45–50 Å, an equivalent oxide thickness (EOT) of 8.7 Å was achieved with a low gate oxide leakage current density (Jg) of (2–4)×10-3 A/cm2 at VG-VFB=1.0 V. This is the thinnest EOT thickness ever reported for high-k III-V MOSCAPs. On the other hand, with thicker HfO2 of 100–110 Å, an EOT of 20–22 Å with Jg of (2–4)×10-6 A/cm2 at VG-VFB=1.0 V was attained. In addition, breakdown voltages of gate oxide and hysteresis characteristics according to different thicknesses of HfO2 were studied. The results indicate that a Ge IPL and thin HfO2 enable excellent gate oxide scaling down in GaAs system.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 4 )

Date of Publication:

Jul 2007

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