By Topic

W2B and CrB2 diffusion barriers for Ni/Au contacts to p-GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Voss, L.F. ; Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 ; Stafford, L. ; Wright, J.S. ; Pearton, S.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2762280 

Ohmic contacts to p-type GaN were fabricated using W2B and CrB2 as diffusion barriers for a traditional Ni/Au contact scheme. The annealing temperature dependence (25–1000 °C) of contact resistance and the thermal aging characteristics at 200 °C were examined. A minimum contact resistance of ∼2×10-4 Ω cm2 was achieved after annealing at 700 °C for 60 s. These contacts also showed excellent stability as a function of aging at 200 °C. Auger electron depth profiles reveal a large degree of intermixing at the GaN interface between Ni and Au.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 4 )