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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:4 Help

Nonlinear optical properties of semiconductor quantum wells under intense terahertz radiation

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4 Author(s)
Zhang, T.Y. ; State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, 17 Xinxi Road, Xi’an 710119, People’s Republic of China ; Zhao, W. ; Liu, X.M. ; Zhang, C.

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The nonlinear optical properties of semiconductor quantum wells driven by intense in-plane terahertz electric fields are investigated theoretically by employing the extended semiconductor Bloch equations. The dynamical Franz-Keldysh effect of the optical absorption near the band edge is analyzed with Coulomb correlation among the carriers included. The in-plane terahertz field induces a variety of behavior in the absorption spectra, including terahertz replicas of the (dark) 2p exciton and terahertz sidebands of the 1s exciton. The dependence of these interesting features on the intensity, frequency, and phase of the terahertz field is explored in detail.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 4 )

Date of Publication: Jul 2007

Page(s):
041909 - 041909-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2760040
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jul 2007

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