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Lasing characteristics of a GaN photonic crystal nanocavity light source

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7 Author(s)
Lai, Chun-Feng ; Department of Photonics, National Chiao-Tung University, 300 Hsinchu, Taiwan, Republic of China and Institute of Electro-Optical Engineering, National Chiao-Tung University, 300 Hsinchu, Taiwan, Republic of China ; Peichen Yu ; Te-Chung Wang ; Hao-Chung Kuo
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Lasing characteristics from photonic crystal defects fabricated on bulk GaN are investigated. The device demonstrates multimode lasing with linewidths as narrow as 2–3 Å, and an enhanced spontaneous emission factor β∼0.045. The emission spectra indicate that the laser emission is initiated horizontally in the defect nanocavity and then coupled to the vertical radiation, possibly via photonic crystal Bloch modes or by scattering.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 4 )

Date of Publication:

Jul 2007

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