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Nonpolar m-plane thin film GaN and InGaN/GaN light-emitting diodes on LiAlO2(100) substrates

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18 Author(s)
Liu, B. ; Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials and Department of Physics, Nanjing University, Nanjing 210093, People’s Republic of China ; Zhang, R. ; Xie, Z.L. ; Liu, C.X.
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The nonpolar m-plane (1100) thin film GaN and InGaN/GaN light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition on LiAlO2 (100) substrates are reported. The LEDs emit green light with output power of 80 μW under a direct current of 20 mA for a 400×400 μm2 device. The current versus voltage (I-V) characteristic of the diode shows soft rectifying properties caused by defects and impurities in the p-n junction. The electroluminescence peak wavelength dependence on injection current, for currents in excess of 20 mA, saturates at 515–516 nm. This proves the absence of polarization fields in the active region present in c-plane structures. The light output intensity versus current (L-I) characteristic of the diode exhibits a superlinear relation at low injection current caused by nonradiative centers providing a shunt path and a linear light emission zone at high current level when these centers are saturated.

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Applied Physics Letters  (Volume:91 ,  Issue: 25 )