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Dielectric properties of Ba0.6Sr0.4TiO3 thin films using Pb0.3Sr0.7TiO3 buffer layers

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Ba0.6Sr0.4TiO3 (BST) thin films buffered with Pb0.3Sr0.7TiO3 (PST) at each side of the interface contact with electrodes (PST/BST/PST) were deposited on Pt/Ti/SiO2/Si substrates. The dielectric properties of the films were measured using planar Pt/PST/BST/PST/Pt/Ti/SiO2/Si capacitor structures. The existence of a PST layer between the BST and Pt electrode can improve the dielectric properties of the BST film. The loss tangent of the multilayered films annealed at 750 °C was found to be 0.016 at 1 MHz and room temperature. The films showed a ∼31.7% tunability of the permittivity at an applied bias field of 0.85 MV/cm. This suggests that such films have potential applications for integrated device applications.

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Applied Physics Letters  (Volume:91 ,  Issue: 25 )