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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:25 Help

Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma

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10 Author(s)
Tae Joo Park ; Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742, Korea ; Kim, Jeong Hwan ; Jang, Jae Hyuck ; Na, Kwang Duk
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TaCxNy films were grown by a plasma-enhanced atomic layer deposition using Ta(N-t-C5H11)[N(CH3)2]3 as the precursor and H2 or Ar/H2 plasma as the reducing agent. The Ar/H2 plasma appeared to efficiently break the Ta–N bonds in the Ta precursor and formed more TaCx, which significantly decreased the resistivity of the films (∼255 μΩ cm) compared with the case of the H2 plasma (∼1570 μΩ cm). The Ar/H2 plasma also made the films denser and efficiently eliminated the oxygen from the films. This improved the resistance against the elemental diffusion as well as the aging characteristics of the films after exposure to air.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 25 )

Date of Publication: Dec 2007

Page(s):
252106 - 252106-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2825272
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Dec 2007

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