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Transport properties of field-effect transistor with Langmuir-Blodgett films of C60 dendrimer and estimation of impurity levels

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9 Author(s)
Kawasaki, Naoko ; Research Laboratory for Surface Science, Okayama University, Okayama 700-8530, Japan ; Nagano, Takayuki ; Kubozono, Yoshihiro ; Sako, Yuuki
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Field-effect transistor (FET) device has been fabricated with Langmuir-Blodgett films of C60 dendrimer. The device showed n-channel normally off characteristics with the field-effect mobility of 2.7×10-3 cm2 V-1 s-1 at 300 K, whose value is twice as high as that (1.4×10-3 cm2 V-1 s-1) for the FET with spin-coated films of C60 dendrimer. This originates from the formation of ordered π-conduction network of C60 moieties. From the temperature dependence of field-effect mobility, a structural phase transition has been observed at around 300 K. Furthermore, the density of states for impurity levels was estimated in the Langmuir-Blodgett films.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 24 )

Date of Publication:

Dec 2007

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