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Temperature-mediated saturation and current-induced recovery of the Vf drift in 4H-SiC p-i-n diodes

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4 Author(s)
Caldwell, J.D. ; Naval Research Laboratory, 4555 Overlook Ave. SW, Washington, D.C. 20375, USA ; Glembocki, Orest J. ; Stahlbush, Robert E. ; Hobart, K.D.

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4H-SiC is desirable for high power and temperature electronic applications. However, for bipolar devices, device operation induces Shockley stacking fault (SSF) expansion and a drift in the forward voltage drop (Vf). Here, we present results showing that the electrically induced SSF expansion and Vf drift saturate. The saturation voltage is strongly temperature dependent and decreases tenfold at 247 °C from 30 °C. In heavily faulted diodes, the injection of relatively high currents (≪35A/cm2) at elevated temperatures (∼245 °C) actually induced a partial recovery of the drift. A possible driving force mechanism for SSF expansion based on these results is then presented.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 24 )

Date of Publication:

Dec 2007

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