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Effect of mechanical strain on mobility of polycrystalline silicon thin-film transistors fabricated on stainless steel foil

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3 Author(s)
Po-Chin Kuo ; Display Research Laboratory, ECE Department, Lehigh University, 16A Memorial Drive East, Bethlehem, Pennsylvania 18015, USA ; Jamshidi-Roudbari, Abbas ; Hatalis, M.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2824812 

The effect of uniaxial tensile strain parallel to the channel on mobility of polycrystalline silicon thin-film transistors (TFTs) on stainless steel foil has been investigated. The electron mobility increases by 20% while the hole mobility decreases by 6% as the strain increases to 0.5%, and both followed by saturation as the strain increases further. The off current decreases for both types of TFTs under strain. All TFTs remained functional at the applied strain of 1.13%.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 24 )

Date of Publication:

Dec 2007

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