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Hydrogen shuttling near Hf-defect complexes in Si/SiO2/HfO2 structures

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6 Author(s)
Marinopoulos, A.G. ; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235, USA ; Batyrev, I. ; Zhou, X.J. ; Schrimpf, R.D.
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We propose that a defect complex comprising a suboxide Hf–Si bond and an interfacial dangling bond is responsible for the stress-induced buildup of interface traps in Si/SiO2/HfO2 capacitors. With the aid of first-principles calculations, we show that these defects possess a symmetric double-well energy minimum with a moderate intervening barrier. The calculated activation energies suggest a relatively easy hopping of H atoms between the two energy minima (a field-aided shuttling mechanism). This mechanism can explain the experimentally measured oscillations of interface-trap densities during switched-bias conditions following x-ray irradiation or constant-voltage stress.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 23 )

Date of Publication:

Dec 2007

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