IEEE.org| IEEE Xplore Digital Library| IEEE Standards| IEEE Spectrum| More Sites

Cart (Loading....) | Create Account | 

Close category search window
Author Searchbeta |  Advanced Search  |  Preferences |  Search Tips  |  More Search Options  
 
Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:23 Help

Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

Full Text Sign-In or Purchase

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing! close button
puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Chung, T.F. ; Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People’s Republic of China ; Luo, L.B. ; He, Z.B. ; Leung, Y.H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2811717 

Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 23 )

Date of Publication: Dec 2007

Page(s):
233112 - 233112-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2811717
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Dec 2007

IEEE Account

Purchase Details

Profile Information

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.