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Selective growth of catalyst-free ZnO nanowire arrays on Al:ZnO for device application

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7 Author(s)
Chung, T.F. ; Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, People’s Republic of China ; Luo, L.B. ; He, Z.B. ; Leung, Y.H.
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Vertically aligned ZnO nanowire (NW) arrays have been synthesized selectively on patterned aluminum-doped zinc oxide (AZO) layer deposited on silicon substrates without using any metal catalysts. The growth region was defined by conventional photolithography with an insulating template. Careful control of the types of template materials and growth conditions allows good alignment and growth selectivity for ZnO NW arrays. Sharp ultraviolet band-edge peak observed in the photoluminescence spectra of the patterned ZnO NW arrays reveals good optical qualities. The current-voltage characteristics of ZnO NWs/AZO/p-Si device suggest that patterned and aligned ZnO NW arrays on AZO may be used in optoelectronic devices.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 23 )

Date of Publication:

Dec 2007

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