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The improvement of retention time of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Y2O3)-semiconductor transistors by surface treatments

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3 Author(s)
Wen-Chieh Shih ; Department of Electrical Engineering and Institute of Electronics Engineering, Tsing-Hua University, Hsinchu, Taiwan 30013, Republic of China ; Kang, Kun-yung ; Lee, Joseph Ya‐min

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Metal-ferroelectric-insulator-silicon transistors [Fe-field-effect transistors (FeFETs)] with Al/Pb (Zr0.53,Ti0.47) O3/Y2O3/Si structure were fabricated. The wafers were pretreated with H2O2 before Y2O3 deposition and post-treated with HCl after Y2O3 deposition. With both treatments, the drain current ratio after writing pulses of ±8 V with a duration of 100 ns was measured as 105. The leakage current was reduced from 10-3 to 10-6 A/cm2. The FeFETs maintain a threshold voltage window of about 1.5 V after an elapsed time of 5000 s. The improvements are due to the reduction of the leakage current and the charge injection effect at the Y2O3/Si interface.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 23 )