InGaN/GaN light emitting diodes on nanoscale silicon on insulator

The authors report on the fabrication of InGaN/GaN-based light emitting diodes (LEDs) on nanoscale silicon-on-insulator (SOI) substrates. The LED structures are grown on (111)-oriented 45 nm thick SOI overlayer by metal organic chemical vapor deposition. Square-shaped mesa patterns are created by standard LED processing steps including multiple-mask photolithography, inductive coupled plasma etching, and contact metallization. Due to the high reflective Si/SiO₂ beneath AlN buffer and high refractive contrasts at the interfaces, the authors observed multiple interference peaks from LEDs on SOI and such effect resulted in an increased integrated electroluminescence intensity when compared to LED structures fabricated on bulk Si(111).