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Poly(3,3-didodecylquarterthiophene) field effect transistors with single-walled carbon nanotube based source and drain electrodes

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7 Author(s)
Zhang, Yuan Yuan ; School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Ave., Singapore 639798, Singapore ; Shi, Yumeng ; Fuming Chen ; Mhaisalkar, S.G.
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A solution processable method for employing single-walled carbon nanotubes (SWCNTs) as bottom contact source/drain electrodes for a significant reduction of contact resistance in poly(3,3-didodecylquarterthiophene) based organic field effect transistors (OFETs) is proposed. A two order of magnitude reduction in contact resistance and up to a threefold improvement in field effect mobilities were observed in SWCNT contacted OFETs as opposed to similar devices with gold source/drain electrodes. Based on Kelvin probe measurements, this improvement was attributed to a reduction in the Schottky barrier for hole injection into organic semiconductor.

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Applied Physics Letters  (Volume:91 ,  Issue: 22 )