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Negative differential resistance at Ag/Si nanowires on silicon carbide: From a passive to an active massively parallel architecture

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3 Author(s)
Silly, M.G. ; Commissariat à l’Energie Atomique, Laboratoire SIMA, DSM-DRECAM-SPCSI, Bâtiment 462, Saclay, 91191 Gif sur Yvette Cedex, France and Département de Physique, Université de Paris-Sud, 91405 Orsay Cedex, France ; Charra, F. ; Soukiassian, P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2817953 

We study massively parallel Si atomic lines as a template for Ag deposition on silicon carbide surfaces by scanning tunneling microscopy and spectroscopy (electrons/photons). This atomically engineered passive system amazingly turns into an active network with Ag/Si nanowires exhibiting a negative differential resistance behavior. This results from Ag atoms selectively inducing a surface state at Si nanowires yielding a double tunnel barrier. These findings lead to a massively parallel active architecture in the solid state.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 22 )

Date of Publication:

Nov 2007

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