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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:22 Help

Mechanisms of current formation in resonant tunneling AlN/GaN heterostructures

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6 Author(s)
Petrychuk, M.V. ; Taras Shevchenko National University, Kiev 01033, Ukraine ; Belyaev, A.E. ; Kurakin, A.M. ; Danylyuk, S.V.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2817752 

This paper presents an analysis of transport and noise properties of double-barrier resonant tunneling diodes formed on the basis of AlN/GaN heterostructures. Two stable states are registered in the I-V characteristics of the diodes. The temperature dependences of current and noise behavior are analyzed to understand the contribution of different mechanisms responsible for current formation in the structures. The evolution of the spectral density of the noise current with temperature reveals several recombination-generation components. The mechanisms responsible for the formation of current in AlN/GaN/AlN diodes are discussed taking into account the Poole-Frenkel effect.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 22 )

Date of Publication: Nov 2007

Page(s):
222112 - 222112-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2817752
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2007

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