High quality GaN film was successfully grown on 150 mm Si (111) substrate by metal-organic vapor phase epitaxy method using AlN multilayer combined with graded AlGaN layer as buffer. The buffer layer structure, film quality, and film thickness are critical for the growth of the crack-free GaN film on Si (111) substrate. Using multilayer AlN films grown at different temperatures combined with graded Al1-xGaxN film as the buffer, the tensile stress on the buffer layer was reduced and the compressive stress on the GaN film was increased. As a result, high quality 0.5 μm crack-free GaN epitaxial layer was successfully grown on 6 in. Si substrate.