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Enhancement of field effect mobility of poly(3-hexylthiophene) thin film transistors by soft-lithographical nanopatterning on the gate-dielectric surface

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5 Author(s)
Park, Jeong-Ho ; Heeger Center for Advanced Materials, Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, 1 Oryong-Dong, Buk-Gu, Gwangju 500-712, Republic of Korea ; Kang, Seok-Ju ; Park, Jeong-Woo ; Lim, Bogyu
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The submicroscaled octadecyltrichlorosilane (OTS) line patterns on gate-dielectric surfaces were introduced into the fabrication of organic field effect transistors (OFETs). These spin-cast regioregular poly(3-hexylthiophene) films on soft-lithographically patterned SiO2 surfaces yielded a higher hole mobility (∼0.072 cm2/V s) than those of unpatterned (∼0.015 cm2/V s) and untreated (∼5×10-3 cm2/V s) OFETs. The effect of mobility enhancement as a function of the patterned line pitch was investigated in structural and geometric characteristics. The resulting improved mobility is likely attributed to the formation of efficient π-π stacking as a result of guide-assisted, local self-organization-involved molecular interactions between the poly(3-hexylthiophene) polymer and the geometrical OTS patterns.

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Applied Physics Letters  (Volume:91 ,  Issue: 22 )