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Electrical detection of kidney injury molecule-1 with AlGaN/GaN high electron mobility transistors

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9 Author(s)
Wang, H.T. ; Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611, USA ; Kang, B.S. ; Ren, F. ; Pearton, S.J.
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AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect kidney injury molecule-1 (KIM-1), an important biomarker for early kidney injury detection. The gate region consisted of 5 nm gold deposited onto the AlGaN surface. The gold was conjugated to highly specific KIM-1 antibodies through a self-assembled monolayer of thioglycolic acid. The HEMT source-drain current showed a clear dependence on the KIM-1 concentration in phosphate-buffered saline solution. The limit of detection was 1 ng/ml using a 20×50 μm2 gate sensing area. This approach shows potential for both preclinical and clinical kidney injury diagnosis with accurate, rapid, noninvasive, and high throughput capabilities.

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Applied Physics Letters  (Volume:91 ,  Issue: 22 )