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1.58 μm InGaAs quantum well laser on GaAs

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10 Author(s)
Tangring, I. ; Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden ; Ni, H.Q. ; Wu, B.P. ; Wu, D.H.
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We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 μm2 broad area laser, a minimum threshold current density of 490 A/cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 μm GaAs-based lasers.

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Applied Physics Letters  (Volume:91 ,  Issue: 22 )