By Topic

1.58 μm InGaAs quantum well laser on GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Tangring, I. ; Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden ; Ni, H.Q. ; Wu, B.P. ; Wu, D.H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We demonstrate the 1.58 μm emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250×50 μm2 broad area laser, a minimum threshold current density of 490 A/cm2 was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 μm GaAs-based lasers.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 22 )