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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:20 Help

Impact of axial strain on drain current of carbon-nanotube field-effect transistors with doped junctions

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2 Author(s)
Uchida, K. ; Advanced LSI Technology Laboratory, Toshiba Corporation 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan ; Saitoh, M.
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The effect of axial strain on the performance of carbon-nanotube field-effect transistors with doped junctions is studied. When the diameter of carbon nanotubes (CNTs) is less than 1.5 nm, the decrease of the off-current by axial strain occurs together with the decrease of on-current. However, if the diameter of CNTs is larger than 1.5 nm, axial strain is effective for decreasing off-current while enhancing the on-current at the same time. The decrease of off-current is due to the opening of the bandgap by axial strain, whereas the increase of on-current is attributable to current flowing through the first excited state.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 20 )

Date of Publication: Nov 2007

Page(s):
203520 - 203520-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2813016
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2007

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