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Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

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5 Author(s)
Tanner, Carey M. ; Department of Chemical and Biomolecular Engineering, UCLA, Los Angeles, California 90095, USA ; Perng, Ya-Chuan ; Frewin, Christopher ; Saddow, Stephen E.
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Stoichiometric and pure Al2O3 gate dielectric films were grown on n-type 4H-SiC by a thermal atomic layer deposition process. The electrical properties of both amorphous and epitaxial Al2O3 films were studied by capacitance-voltage and current-voltage measurements of metal-oxide-semiconductor capacitors. A dielectric constant of 9 and a flatband voltage shift of +1.3 V were determined. A leakage current density of 10-3 A/cm2 at 8 MV/cm was obtained for the amorphous Al2O3 films, lower than that of any high-κ gate oxide on 4H-SiC reported to date. A Fowler-Nordheim tunneling mechanism was used to determine an Al2O3/4H-SiC barrier height of 1.58 eV. Higher leakage current was obtained for the epitaxial γ-Al2O3 films, likely due to grain boundary conduction.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 20 )

Date of Publication:

Nov 2007

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