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Structural investigation of nitrided c-sapphire substrate by grazing incidence x-ray diffraction and transmission electron microscopy

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14 Author(s)
Lee, Hyo-Jong ; Center of Interdisciplinary Research, Tohoku University, 6-3 Aoba, Aramaki, Aoba-ku, Sendai 980-8578, Japan ; Jun-Seok Ha ; Lee, S.W. ; Lee, H.J.
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A grazing incidence x-ray diffraction with a synchrotron radiation and a cross-sectional high-resolution transmission electron microscopy were performed on the sapphire surface nitrided at 1080 °C for 30 min. The thickness of the nitrided layer was about 2 nm. It was found out that the wurtzite, zinc-blende, and 30° rotated zinc-blende aluminum nitrides were formed on the sapphire surface. The 30° rotated zb-AlN formed the incoherent interface and has higher activation energy of formation, while the nonrotated zb-AlN formed the coherent interface.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 20 )

Date of Publication:

Nov 2007

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