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Spin-dependent resonant tunneling through 6 μm diameter double barrier resonant tunneling diode

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6 Author(s)
Fang, Z.L. ; Department of Physics, Duke University, Durham, North Carolina 27708 ; Wu, P. ; Kundtz, N. ; Chang, A.M.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2751132 

A vertical resonant tunneling diode based on the paramagnetic Zn1-x-yMnyCdxSe system has been fabricated with a pillar diameter down to ∼6 μm. The diode exhibits high quality resonant tunneling characteristics through the electron subband of the quantum well at a temperature of 4.2 K, where a clear phonon replica was observable in addition to the primary peak. Both peaks show a giant Zeeman splitting in an applied magnetic field. Employing a self-consistent real-time Green’s function method, the current-voltage characteristic was simulated, showing good agreement with the measured result.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 2 )

Date of Publication:

Jul 2007

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