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Photoluminescence of dome and hut shaped Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

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7 Author(s)
Shaleev, M.V. ; Institute for Physics of Microstructures RAS, GSP-105, 603950 Nizhny Novgorod, Russia ; Novikov, A.V. ; Yablonskiy, A.N. ; Drozdov, Y.N.
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The effect of the growth temperature (Tg) on photoluminescence of Ge(Si) self-assembled islands embedded between tensile-strained Si layers was studied. The observed redshift of the photoluminescence peak of the dome islands with a decrease of Tg from 700 to 630 °C is associated with an increase of Ge content in the islands and with the suppression of smearing of the strained Si layers. The blueshift of the photoluminescence peak with a decrease of Tg from 630 to 600 °C is associated with a change of the type of islands on surface, which is accompanied by a decrease in islands’ height.

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Applied Physics Letters  (Volume:91 ,  Issue: 2 )