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GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

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7 Author(s)
Shahrjerdi, D. ; Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, USA ; Garcia-Gutierrez, D.I. ; Akyol, T. ; Bank, S.R.
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In this letter, we have investigated the physical and electrical characteristics of atomic layer deposition of HfO2 on GaAs substrates. X-ray photoelectron spectroscopy (XPS) analysis revealed no significant reduction of arsenic oxides upon deposition of HfO2 on GaAs using tetrakis(dimethyl-amino)hafnium [Hf(NMe2)4] as the metallic precursor. However, XPS confirmed the absence of arsenic oxides at the interface of HfO2 and sulfide-treated GaAs. High-resolution transmission electron microcopy analysis verified a smooth interface between HfO2 and sulfur-passivated GaAs. In addition, frequency dispersion behavior of capacitors on p-type GaAs substrates was remarkably improved by employing an appropriate surface chemical treatment.

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Applied Physics Letters  (Volume:91 ,  Issue: 19 )