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Ultralow equivalent oxide thickness obtained for thin amorphous LaAlO3 layers grown on Si(001)

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9 Author(s)
Becerra, L. ; Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, Ecole Centrale de Lyon, Ecully F-69134, France ; Merckling, C. ; Baboux, N. ; Plossu, C.
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Electron beam evaporation in a molecular beam epitaxy reactor was used to deposit, at 400 °C, amorphous LaAlO3 high-κ oxide films on p-type Si(001). X-ray photoelectron spectroscopy and transmission electron microscopy showed that the interface with Si is free of SiO2 or silicates. Electrical measurements performed on as-deposited samples reveal an equivalent oxide thickness as low as 5 Å for a film having a physical thickness of 41 Å, a leakage current of 5.6×10-2 A/cm2 at |Vg-VFB|=1 V, and no flatband voltage shift.

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Applied Physics Letters  (Volume:91 ,  Issue: 19 )