A metal-high-k-high-k-oxide-silicon structure was fabricated for nonvolatile memory applications. Al/La2O3/Ta2O5/SiO2/Si capacitors and field effect transistors were fabricated using Ta2O5 as the charge storage layer and La2O3 as the blocking layer. The programing time of the Al/La2O3/Ta2O5/SiO2/Si transistors was characterized. With a programing pulse voltage of 6 V, a threshold voltage shift of more than 0.5 V was achieved in 10 ns. As for the retention properties, the Al/La2O3/Ta2O5/SiO2/Si transistors can keep a ΔVth window of 0.83 V for 10 yr.