By Topic

Metal-high-k-high-k-oxide-semiconductor capacitors and field effect transistors using Al/La2O3/Ta2O5/SiO2/Si structure for nonvolatile memory applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Cheng, Chih-Hao ; Institute of Electronics Engineering, Department of Electrical Engineering, Tsing-Hua University, Hsinchu, Taiwan 30013, Republic of China ; Lee, Joseph Ya‐min

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2800821 

A metal-high-k-high-k-oxide-silicon structure was fabricated for nonvolatile memory applications. Al/La2O3/Ta2O5/SiO2/Si capacitors and field effect transistors were fabricated using Ta2O5 as the charge storage layer and La2O3 as the blocking layer. The programing time of the Al/La2O3/Ta2O5/SiO2/Si transistors was characterized. With a programing pulse voltage of 6 V, a threshold voltage shift of more than 0.5 V was achieved in 10 ns. As for the retention properties, the Al/La2O3/Ta2O5/SiO2/Si transistors can keep a ΔVth window of 0.83 V for 10 yr.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 19 )