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Metal-high-k-high-k-oxide-semiconductor capacitors and field effect transistors using Al/La2O3/Ta2O5/SiO2/Si structure for nonvolatile memory applications

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2 Author(s)
Cheng, Chih-Hao ; Institute of Electronics Engineering, Department of Electrical Engineering, Tsing-Hua University, Hsinchu, Taiwan 30013, Republic of China ; Lee, Joseph Ya‐min

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A metal-high-k-high-k-oxide-silicon structure was fabricated for nonvolatile memory applications. Al/La2O3/Ta2O5/SiO2/Si capacitors and field effect transistors were fabricated using Ta2O5 as the charge storage layer and La2O3 as the blocking layer. The programing time of the Al/La2O3/Ta2O5/SiO2/Si transistors was characterized. With a programing pulse voltage of 6 V, a threshold voltage shift of more than 0.5 V was achieved in 10 ns. As for the retention properties, the Al/La2O3/Ta2O5/SiO2/Si transistors can keep a ΔVth window of 0.83 V for 10 yr.

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Applied Physics Letters  (Volume:91 ,  Issue: 19 )