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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:19 Help

Reproducible resistive switching in nonvolatile organic memories

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7 Author(s)
Verbakel, Frank ; Molecular Materials and Nanosystems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands and Dutch Polymer Institute (DPI), P.O. Box 902, 5600 AX Eindhoven, The Netherlands ; Meskers, Stefan C.J. ; Janssen, Rene A.J. ; Gomes, Henrique L.
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Resistive switching in nonvolatile, two terminal organic memories can be due to the presence of a native oxide layer at an aluminum electrode. Reproducible solid state memories can be realized by deliberately adding a thin sputtered Al2O3 layer to nominal electron-only, hole-only, and bipolar organic diodes. Before memory operation, the devices have to be formed at an electric field of 109 V/m, corresponding to soft breakdown of Al2O3. After forming, the structures show pronounced negative differential resistance and the local maximum in the current scales with the thickness of the oxide layer. The polymer acts as a current limiting series resistance.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 19 )

Date of Publication: Nov 2007

Page(s):
192103 - 192103-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2806275
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2007

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