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Annealing of dilute-nitride GaAsSbN/InP strained multiple quantum wells

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7 Author(s)
Xu, D.P. ; Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706-1691, USA ; Huang, J.Y.T. ; Park, J. ; Mawst, L.J.
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The thermal annealing of GaAsSbN/InP strained multiple quantum wells (MQWs) grown by metal organic chemical vapor deposition was investigated. Photoluminescence peak intensity and linewidth changes indicate a significant improvement in optical quality of the GaAsSbN/InP MQWs upon annealing. We find no significant annealing-induced blueshift of the optical transitions, which confirms the theoretical expectation that a change in the nearest-neighbor configuration nitrogen atoms has negligible effect on the band gap of GaAsSbN. The evolution of (400) x-ray diffraction rocking curves with thermal treatment of the samples was consistent with the constituent redistribution in the GaAsSbN QW.

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Applied Physics Letters  (Volume:91 ,  Issue: 19 )