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Browse Journals & Magazines > Applied Physics Letters ...> Volume:91 Issue:19 Help

Annealing of dilute-nitride GaAsSbN/InP strained multiple quantum wells

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7 Author(s)
Xu, D.P. ; Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706-1691, USA ; Huang, J.Y.T. ; Park, J. ; Mawst, L.J.
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The thermal annealing of GaAsSbN/InP strained multiple quantum wells (MQWs) grown by metal organic chemical vapor deposition was investigated. Photoluminescence peak intensity and linewidth changes indicate a significant improvement in optical quality of the GaAsSbN/InP MQWs upon annealing. We find no significant annealing-induced blueshift of the optical transitions, which confirms the theoretical expectation that a change in the nearest-neighbor configuration nitrogen atoms has negligible effect on the band gap of GaAsSbN. The evolution of (400) x-ray diffraction rocking curves with thermal treatment of the samples was consistent with the constituent redistribution in the GaAsSbN QW.

Published in:
Applied Physics Letters  (Volume:91 ,  Issue: 19 )

Date of Publication: Nov 2007

Page(s):
191909 - 191909-3
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.2805637
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Nov 2007

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