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High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO

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4 Author(s)
Lim, S.J. ; Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), San 31, Hyoja-dong, Nam-gu, Pohang 790-784, Republic of Korea ; Soon-Ju Kwon ; Kim, Hyungjun ; Park, Jin-Seong

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High performance thin film transistor (TFT) with atomic layer deposition (ALD) nitrogen doped ZnO (ZnO:N) as an active layer is demonstrated. The electrical properties of ZnO thin films were effectively controlled by in situ nitrogen doping using NH4OH as a source for reactants. Especially, the electron concentration in ZnO was lowered to below 1015 cm-3. Good device characteristics were obtained from the inverted staggered type TFTs with ZnO:N channel and ALD Al2O3 gate insulator; μsat=6.7 cm2/V s, Ioff=2.03×10-12 A, Ion/off=9.46×107, and subthreshold swing=0.67 V/decade. The entire TFT fabrication processes were carried out at below 150 °C, which is a favorable process for plastic based flexible display.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 18 )