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Axial orientation of molecular-beam-epitaxy-grown Fe3Si/Ge hybrid structures and its degradation

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8 Author(s)
Maeda, Y. ; Department of Energy Science and Technology, Kyoto University, Sakyo-ku, Kyoto 606-8501, Japan ; Jonishi, Takafumi ; Narumi, Kazumasa ; Ando, Yu-ichiro
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The axial orientation of molecular-beam-epitaxy (MBE)-grown Fe3Si(111)/Ge(111) hybrid structures was investigated by Rutherford backscattering spectroscopy. We confirmed that during MBE above 300 °C, the interdiffusion of Fe and Ge atoms results in a composition change and the epitaxial growth of FeGe in Fe3Si. Low-temperature (≪200 °C) MBE can realize fully ordered DO3Fe3Si with highly axial orientation [minimum yield min)=2.2%]. Postannealing above 400 °C results in a composition change and the degradation of axial orientation in the off-stoichiometric Fe3Si. The significance of stoichiometry with regard to thermal stability and the interfacial quality of Fe3Si(111)/Ge(111) hybrid structures was also discussed.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 17 )

Date of Publication:

Oct 2007

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