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Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation

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11 Author(s)
Hinkle, C.L. ; Department of Electrical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA ; Sonnet, A.M. ; Vogel, E.M. ; McDonnell, S.
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The method of surface preparation on n-type GaAs, even with the presence of an amorphous-Si interfacial passivation layer, is shown to be a critical step in the removal of accumulation capacitance frequency dispersion. In situ deposition and analysis techniques were used to study different surface preparations, including NH4OH, Si-flux, and atomic hydrogen exposures, as well as Si passivation depositions prior to in situ atomic layer deposition of Al2O3. As–O bonding was removed and a bond conversion process with Si deposition is observed. The accumulation capacitance frequency dispersion was removed only when a Si interlayer and a specific surface clean were combined.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 16 )

Date of Publication:

Oct 2007

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