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5-nm-thick TaSiC amorphous films stable up to 750 °C as a diffusion barrier for copper metallization

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5 Author(s)
Lin, Ting-Yi ; Department of Materials Science and Engineering, National Tsing-Hua University, Hsinchu 300, Taiwan, Republic of China ; Cheng, Huai-Yu ; Tsung-Shune Chin ; Chiu, Chin-Fu
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Ultrathin TaSiC amorphous films prepared by magnetron cosputtering using TaSi2 and C targets on Si(100), in a sandwiched scheme Si(100)/TaSiC(5 nm)/Cu, were evaluated for barrier performance in copper metallization. Optimizing carbon content maximizes thermal stability of the films as depicted by sheet-resistance, x-ray diffraction, and transmission electron microscopy examination. The stability temperatures of 700 °C (24 at. % C) and 750 °C (34 at. % C) have been systematically verified and discussed. Since Ta, Si, and C are compatible with integrated circuit (IC) processing, the TaSiC films are readily applicable for sub-65-nm IC production.

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Applied Physics Letters  (Volume:91 ,  Issue: 15 )