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Improved electrical properties of metal-oxide-semiconductor capacitor with HfTiON gate dielectric by using HfSiON interlayer

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6 Author(s)
Xu, J.P. ; Department of Electronic Science and Technology, Huazhong University of Science and Technology, Wuhan 430074, People’s Republic of China ; Ji, F. ; Li, C.X. ; Lai, P.T.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2798248 

Metal-oxide-semiconductor (MOS) capacitor with HfTiON/HfSiON stack structure as high-k gate dielectric is fabricated, and its electrical properties are compared with those of a similar device with HfTiON only as gate dielectric. Experimental results show that the device with HfTiON/HfSiON gate dielectric exhibits better interface properties, lower gate leakage current, and enhanced high-field reliability. All these improvements should be attributed to the fact that the HfSiON buffer layer effectively blocks the diffusion of Ti atoms to the Si substrate, thus resulting in a SiO2/Si-like HfSiON/Si interface.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 15 )

Date of Publication:

Oct 2007

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