By Topic

A model for the polarization hysteresis loops of the perovskite-type ferroelectric thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
9 Author(s)
Yang, Feng ; Faculty of Material and Optoelectronic Physics, Xiangtan University, Hunan 411105, China, and Key Laboratory of Low Dimensional Materials and Application Technology, Xiangtan University, Ministry of Education, Xiangtan, Hunan 411105, China ; Tang, M.H. ; Zhou, Y.C. ; Zheng, X.J.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A model has been developed for the P-E hysteresis behavior from the perspective of dipole switching. Hysteresis loops have been reproduced with the model to agree reasonably well with the experimental data measured from various ferroelectric thin films. The model can also predict asymmetric hysteresis loop measured under unconventional situation. Additionally, the mathematical description can be easily combined with electronic design automation software in circuit simulation of ferroelectric capacitor or ferroelectric field effect transistor.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 14 )