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Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric

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11 Author(s)
Yang, T. ; School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA ; Xuan, Y. ; Zemlyanov, D. ; Shen, T.
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A systematic capacitance-voltage study has been performed on GaAs metal-oxide-semiconductor (MOS) structures with atomic-layer-deposited HfO2/Al2O3 nanolaminates as gate dielectrics. A HfO2/Al2O3 nanolaminate gate dielectric improves the GaAs MOS characteristics such as dielectric constant, breakdown voltage, and frequency dispersion. A possible origin for the widely observed larger frequency dispersion on n-type GaAs than p-type GaAs is discussed. Further experiments show that the observed hysteresis is mainly from the mobile changes and traps induced by HfO2 in bulk oxide instead of those at oxide/GaAs interface.

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Applied Physics Letters  (Volume:91 ,  Issue: 14 )