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Room-temperature lasing at 1.82 μm of GaInSb/AlGaSb quantum wells grown on GaAs substrates using an interfacial misfit array

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7 Author(s)
Tatebayashi, J. ; Center for High Technology Materials, University of New Mexico, 1313 Goddard SE, Albuquerque, New Mexico 87106, USA ; Jallipalli, A. ; Kutty, M.N. ; Huang, S.H.
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The authors report the device characteristics of GaInSb/AlGaSb quantum well (QW) lasers monolithically grown on GaAs substrates. The 7.8% lattice mismatch between GaAs substrates and GaSb buffer layers can be completely accommodated by using an interfacial misfit (IMF) array. Room-temperature lasing operation is obtained from a 1.25-mm-long device containing six-layer Ga0.9In0.1Sb/Al0.35Ga0.65Sb QWs at 1.816 μm with a threshold current density of 1.265 kA/cm2. The observed characteristic temperature and temperature coefficient are 110 K and 9.7 Å/K, respectively. This IMF technique will enable a wide range of lasing wavelengths from near-infrared to midwavelength-infrared regimes on a GaAs platform.

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Applied Physics Letters  (Volume:91 ,  Issue: 14 )