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Temperature dependence of current-voltage characteristics of npn-type GaN/InGaN double heterojunction bipolar transistors

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3 Author(s)
Nishikawa, Atsushi ; NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan ; Kumakura, K. ; Makimoto, T.

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We investigated the temperature dependence of the common-emitter current-voltage (I-V) characteristics of npn-type GaN/InGaN double heterojunction bipolar transistors. Although the current gain decreases with increasing measurement temperature, the current gain measured at 300 °C is still as high as 308. The reduction of the current gain with temperature is attributed not only to the hole back-injection current from the base into the emitter but also to the shorter minority carrier diffusion length due to the increase in the carrier concentration of the p-InGaN base.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 13 )

Date of Publication:

Sep 2007

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