By Topic

Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Manceau, J.-P. ; STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France ; Bruyere, S. ; Jeannot, S. ; Sylvestre, A.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.2790478 

Current instability in metal-oxide-semiconductor and metal-insulator-metal (MIM) capacitors has been previously reported to be a potential reliability issue. This letter intends to study a particular way to reduce these current instabilities with time in high-κ MIM capacitors. It consists in the introduction of a stable dielectric layer between the high-κ dielectric and the electrodes in order to prevent oxygen vacancy formation at interfaces. When applied to Ta2O5 capacitors, the deposition of a thin layer of Al2O3 in the range of a few tens of angstroms enables the strong reduction of current instabilities while maintaining good electrical performances.

Published in:

Applied Physics Letters  (Volume:91 ,  Issue: 13 )