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Metal-insulator-metal capacitors’ current instability improvement using dielectric stacks to prevent oxygen vacancies formation

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5 Author(s)
Manceau, J.-P. ; STMicroelectronics, 850 rue Jean Monnet, BP 16, 38926 Crolles, France ; Bruyere, S. ; Jeannot, S. ; Sylvestre, A.
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Current instability in metal-oxide-semiconductor and metal-insulator-metal (MIM) capacitors has been previously reported to be a potential reliability issue. This letter intends to study a particular way to reduce these current instabilities with time in high-κ MIM capacitors. It consists in the introduction of a stable dielectric layer between the high-κ dielectric and the electrodes in order to prevent oxygen vacancy formation at interfaces. When applied to Ta2O5 capacitors, the deposition of a thin layer of Al2O3 in the range of a few tens of angstroms enables the strong reduction of current instabilities while maintaining good electrical performances.

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Applied Physics Letters  (Volume:91 ,  Issue: 13 )