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Tuning the contact resistance in nanoscale oligothiophene field effect transistors

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6 Author(s)
Hoppe, A. ; School of Engineering and Science, Jacobs University Bremen, Campus Ring 8, 28759 Bremen, Germany ; Seekamp, J. ; Balster, T. ; Gotz, G.
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Nanoscale organic transistors for high frequency applications are often limited by contact resistances. We report on tuning of those resistances by shifting the transport level for dihexyl-n-thiophene (DHnT) semiconductors by variation of the number of thiophenes n from 4 to 7. The intrinsic mobility as well as contact resistance were determined from individual transfer curves of bottom-contact transistors with channel lengths down to 50 nm. Best values were found for DH7T with μ=0.12 cm2/V s and Rc=1 kΩ cm. While the contact resistance remains fairly constant for a given n as expected, the intrinsic mobility still decreases with decreasing channel length.

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Applied Physics Letters  (Volume:91 ,  Issue: 13 )